Stability of mechanically exfoliated layered monochalcogenides under ambient conditions.
Journal
Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288
Informations de publication
Date de publication:
04 Nov 2023
04 Nov 2023
Historique:
received:
08
09
2023
accepted:
27
10
2023
medline:
5
11
2023
pubmed:
5
11
2023
entrez:
5
11
2023
Statut:
epublish
Résumé
Monochalcogenides of groups III (GaS, GaSe) and VI (GeS, GeSe, SnS, and SnSe) are materials with interesting thickness-dependent characteristics, which have been applied in many areas. However, the stability of layered monochalcogenides (LMs) is a real problem in semiconductor devices that contain these materials. Therefore, it is an important issue that needs to be explored. This article presents a comprehensive study of the degradation mechanism in mechanically exfoliated monochalcogenides in ambient conditions using Raman and photoluminescence spectroscopy supported by structural methods. A higher stability (up to three weeks) was observed for GaS. The most reactive were Se-containing monochalcogenides. Surface protrusions appeared after the ambient exposure of GeSe was detected by scanning electron microscopy. In addition, the degradation of GeS and GeSe flakes was observed in the operando experiment in transmission electron microscopy. Additionally, the amorphization of the material progressed from the flake edges. The reported results and conclusions on the degradation of LMs are useful to understand surface oxidation, air stability, and to fabricate stable devices with monochalcogenides. The results indicate that LMs are more challenging for exfoliation and optical studies than transition metal dichalcogenides such as MoS
Identifiants
pubmed: 37925524
doi: 10.1038/s41598-023-46092-1
pii: 10.1038/s41598-023-46092-1
pmc: PMC10625602
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM
Pagination
19114Subventions
Organisme : Fundacja na rzecz Nauki Polskiej
ID : POIR.04.04.00-00-14D6/18-02
Organisme : Fundacja na rzecz Nauki Polskiej
ID : POIR.04.04.00-00-14D6/18-02
Organisme : Fundacja na rzecz Nauki Polskiej
ID : POIR.04.04.00-00-14D6/18-02
Organisme : Fundacja na rzecz Nauki Polskiej
ID : POIR.04.04.00-00-14D6/18-02
Organisme : Fundacja na rzecz Nauki Polskiej
ID : POIR.04.04.00-00-14D6/18-02
Informations de copyright
© 2023. The Author(s).
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