A Time-of-Flight Image Sensor Using 8-Tap P-N Junction Demodulator Pixels.

PN-junction demodulator (PND) depth precision depth-adaptive time-gating-number assignment (DATA) image sensor time-of-flight (ToF)

Journal

Sensors (Basel, Switzerland)
ISSN: 1424-8220
Titre abrégé: Sensors (Basel)
Pays: Switzerland
ID NLM: 101204366

Informations de publication

Date de publication:
14 Apr 2023
Historique:
received: 27 02 2023
revised: 04 04 2023
accepted: 11 04 2023
medline: 28 4 2023
pubmed: 28 4 2023
entrez: 28 4 2023
Statut: epublish

Résumé

This paper presents a time-of-flight image sensor based on 8-Tap P-N junction demodulator (PND) pixels, which is designed for hybrid-type short-pulse (SP)-based ToF measurements under strong ambient light. The 8-tap demodulator implemented with multiple p-n junctions used for modulating the electric potential to transfer photoelectrons to eight charge-sensing nodes and charge drains has an advantage of high-speed demodulation in large photosensitive areas. The ToF image sensor implemented using 0.11 µm CIS technology, consisting of an 120 (H) × 60 (V) image array of the 8-tap PND pixels, successfully works with eight consecutive time-gating windows with the gating width of 10 ns and demonstrates for the first time that long-range (>10 m) ToF measurements under high ambient light are realized using single-frame signals only, which is essential for motion-artifact-free ToF measurements. This paper also presents an improved depth-adaptive time-gating-number assignment (DATA) technique for extending the depth range while having ambient-light canceling capability and a nonlinearity error correction technique. By applying these techniques to the implemented image sensor chip, hybrid-type single-frame ToF measurements with depth precision of maximally 16.4 cm (1.4% of the maximum range) and the maximum non-linearity error of 0.6% for the full-scale depth range of 1.0-11.5 m and operations under direct-sunlight-level ambient light (80 klux) have been realized. The depth linearity achieved in this work is 2.5 times better than that of the state-of-the-art 4-tap hybrid-type ToF image sensor.

Identifiants

pubmed: 37112329
pii: s23083987
doi: 10.3390/s23083987
pmc: PMC10143804
pii:
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Subventions

Organisme : Japan Society for the Promotion of Science
ID : 18H05240

Références

Sensors (Basel). 2020 Feb 14;20(4):
pubmed: 32075170

Auteurs

Ryosuke Miyazawa (R)

Graduate School of Integrated Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan.

Yuya Shirakawa (Y)

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.

Kamel Mars (K)

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.

Keita Yasutomi (K)

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.

Keiichiro Kagawa (K)

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.

Satoshi Aoyama (S)

Brookman Technology, Inc., Hamamatsu 430-0936, Japan.

Shoji Kawahito (S)

Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan.
Brookman Technology, Inc., Hamamatsu 430-0936, Japan.

Classifications MeSH