Tunable SERS Enhancement via Sub-nanometer Gap Metasurfaces.

Raman sensing SERS metasurface nano-optics plasmonics subnanometer

Journal

ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991

Informations de publication

Date de publication:
06 Apr 2022
Historique:
pubmed: 29 3 2022
medline: 29 3 2022
entrez: 28 3 2022
Statut: ppublish

Résumé

Raman sensing is a powerful technique for detecting chemical signatures, especially when combined with optical enhancement techniques such as using substrates containing plasmonic nanostructures. In this work, we successfully demonstrated surface-enhanced Raman spectroscopy (SERS) of two analytes adsorbed onto gold nanosphere metasurfaces with tunable subnanometer gap widths. These metasurfaces, which push the bounds of previously studied SERS nanostructure feature sizes, were fabricated with precise control of the intersphere gap width to within 1 nm for gaps close to and below 1 nm. Analyte Raman spectra were measured for samples for a range of gap widths, and the surface-affected signal enhancement was found to increase with decreasing gap width, as expected and corroborated via electromagnetic field modeling. Interestingly, an enhancement quenching effect was observed below gaps of around 1 nm. We believe this to be one of the few studies of gap-width-dependent SERS for the subnanometer range, and the results suggest the potential of such methods as a probe of subnanometer scale effects at the interface between plasmonic nanostructures. With further study, we believe that tunable sub-nanometer gap metasurfaces could be a useful tool for the study of nonlocal and quantum enhancement-quenching effects. This could aid the development of optimized Raman-based sensors for a variety of applications.

Identifiants

pubmed: 35344345
doi: 10.1021/acsami.2c01335
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

15541-15548

Auteurs

Stephen J Bauman (SJ)

Microelectronics-Photonics Graduate Program, University of Arkansas, Fayetteville, Arkansas 72701, United States.

Ahmad A Darweesh (AA)

Microelectronics-Photonics Graduate Program, University of Arkansas, Fayetteville, Arkansas 72701, United States.

Miles Furr (M)

R.B. Annis School of Engineering, University of Indianapolis, Indianapolis, Indiana 46227, United States.

Meredith Magee (M)

R.B. Annis School of Engineering, University of Indianapolis, Indianapolis, Indiana 46227, United States.

Christos Argyropoulos (C)

Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States.

Joseph B Herzog (JB)

R.B. Annis School of Engineering, University of Indianapolis, Indianapolis, Indiana 46227, United States.
Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, United States.

Classifications MeSH