Interface-dependent phononic and optical properties of GeO/MoSO heterostructures.


Journal

Nanoscale
ISSN: 2040-3372
Titre abrégé: Nanoscale
Pays: England
ID NLM: 101525249

Informations de publication

Date de publication:
20 Jan 2022
Historique:
pubmed: 6 1 2022
medline: 6 1 2022
entrez: 5 1 2022
Statut: epublish

Résumé

The interface-dependent electronic, vibrational, piezoelectric, and optical properties of van der Waals heterobilayers, formed by buckled GeO (b-GeO) and Janus MoSO structures, are investigated by means of first-principles calculations. The electronic band dispersions show that O/Ge and S/O interface formations result in a type-II band alignment with direct and indirect band gaps, respectively. In contrast, O/O and S/Ge interfaces give rise to the formation of a type-I band alignment with an indirect band gap. By considering the Bethe-Salpeter equation (BSE) on top of G

Identifiants

pubmed: 34985489
doi: 10.1039/d1nr06534c
doi:

Types de publication

Journal Article

Langues

eng

Sous-ensembles de citation

IM

Pagination

865-874

Auteurs

M Yagmurcukardes (M)

Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey. mehmetyagmurcukardes.edu@gmail.com.
Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
NANOlab Center of Excellence, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.

Y Sozen (Y)

Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey. mehmetyagmurcukardes.edu@gmail.com.

M Baskurt (M)

Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey. mehmetyagmurcukardes.edu@gmail.com.

F M Peeters (FM)

Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.
NANOlab Center of Excellence, Groenenborgerlaan 171, B-2020 Antwerp, Belgium.

H Sahin (H)

Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey. mehmetyagmurcukardes.edu@gmail.com.

Classifications MeSH