Interaction-Induced Shubnikov-de Haas Oscillations in Optical Conductivity of Monolayer MoSe_{2}.
Journal
Physical review letters
ISSN: 1079-7114
Titre abrégé: Phys Rev Lett
Pays: United States
ID NLM: 0401141
Informations de publication
Date de publication:
30 Aug 2019
30 Aug 2019
Historique:
received:
19
12
2018
entrez:
17
9
2019
pubmed:
17
9
2019
medline:
17
9
2019
Statut:
ppublish
Résumé
We report polarization-resolved resonant reflection spectroscopy of a charge-tunable atomically thin valley semiconductor hosting tightly bound excitons coupled to a dilute system of fully spin- and valley-polarized holes in the presence of a strong magnetic field. We find that exciton-hole interactions manifest themselves in hole-density dependent, Shubnikov-de Haas-like oscillations in the energy and line broadening of the excitonic resonances. These oscillations are evidenced to be precisely correlated with the occupation of Landau levels, thus demonstrating that strong interactions between the excitons and Landau-quantized itinerant carriers enable optical investigation of quantum-Hall physics in transition metal dichalcogenides.
Identifiants
pubmed: 31524484
doi: 10.1103/PhysRevLett.123.097403
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM