Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride.
CMOS-like inverters
ambipolar transistors
copper nitride
electric-double-layer transistors
ionic semiconductors
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
25 Sep 2019
25 Sep 2019
Historique:
pubmed:
29
8
2019
medline:
29
8
2019
entrez:
29
8
2019
Statut:
ppublish
Résumé
Oxide semiconductor thin-film transistors (TFTs) are currently used as the fundamental building blocks in commercial flat-panel displays because of the excellent performance of n-channel TFTs. However, except for a few materials, their p-channel performances have not been acceptable. Although some p-type oxide semiconductors exhibit superior hole transport properties, their TFT performances are greatly deteriorated, which is a major obstacle in the development of complementary metal-oxide-semiconductor (CMOS) circuits. Herein, an ionic nitride semiconductor, copper nitride (Cu
Identifiants
pubmed: 31456393
doi: 10.1021/acsami.9b12068
doi:
Types de publication
Journal Article
Langues
eng
Sous-ensembles de citation
IM