Perovskite ferroelectric tuned by thermal strain.


Journal

Scientific reports
ISSN: 2045-2322
Titre abrégé: Sci Rep
Pays: England
ID NLM: 101563288

Informations de publication

Date de publication:
06 Mar 2019
Historique:
received: 25 10 2018
accepted: 12 02 2019
entrez: 8 3 2019
pubmed: 8 3 2019
medline: 8 3 2019
Statut: epublish

Résumé

Modern environmental and sustainability issues as well as the growing demand for applications in the life sciences and medicine put special requirements to the chemical composition of many functional materials. To achieve desired performance within these requirements, innovative approaches are needed. In this work, we experimentally demonstrate that thermal strain can effectively tune the crystal structure and versatile properties of relatively thick films of environmentally friendly, biocompatible, and low-cost perovskite ferroelectric barium titanate. The strain arises during post-deposition cooling due to a mismatch between the thermal expansion coefficients of the films and the substrate materials. The strain-induced in-plane polarization enables excellent performance of bottom-to-top barium titanate capacitors akin to that of exemplary lead-containing relaxor ferroelectrics. Our work shows that controlling thermal strain can help tailor response functions in a straightforward manner.

Identifiants

pubmed: 30842509
doi: 10.1038/s41598-019-40260-y
pii: 10.1038/s41598-019-40260-y
pmc: PMC6403324
doi:

Types de publication

Journal Article

Langues

eng

Pagination

3677

Références

Nat Commun. 2017 May 30;8:15682
pubmed: 28555655
Phys Rev B Condens Matter. 1996 Feb 1;53(6):3013-3022
pubmed: 9983807
Sci Rep. 2018 Apr 19;8(1):6257
pubmed: 29674690
J Phys Condens Matter. 2014 Aug 13;26(32):325901
pubmed: 25030065
Adv Mater. 2017 May;29(20):
pubmed: 28229531
Sci Rep. 2017 Aug 18;7(1):8726
pubmed: 28821718
ACS Nano. 2018 Feb 27;12(2):1306-1312
pubmed: 29320634
Adv Mater. 2010 Feb 9;22(6):759-62
pubmed: 20217785
Science. 2007 Feb 16;315(5814):954-9
pubmed: 17303745
ACS Appl Mater Interfaces. 2013 Feb;5(4):1474-80
pubmed: 23373765
Sci Rep. 2017 Jan 18;7:40916
pubmed: 28098249
Adv Mater. 2014 Sep;26(36):6341-7
pubmed: 25099557
Sci Rep. 2014 Jan 15;4:3700
pubmed: 24424396

Auteurs

M Tyunina (M)

Microelectronics Research Unit, University of Oulu, P.O. Box 4500, FI-90014, Oulu, Finland. marina.tjunina@oulu.fi.
Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic. marina.tjunina@oulu.fi.

O Pacherova (O)

Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic.

J Peräntie (J)

Microelectronics Research Unit, University of Oulu, P.O. Box 4500, FI-90014, Oulu, Finland.

M Savinov (M)

Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic.

M Jelinek (M)

Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic.

H Jantunen (H)

Microelectronics Research Unit, University of Oulu, P.O. Box 4500, FI-90014, Oulu, Finland.

A Dejneka (A)

Institute of Physics of the Czech Academy of Sciences, Na Slovance 2, 18221, Prague, Czech Republic.

Classifications MeSH