Si-MoS
MoS2
heterojunction
photodetector
p−n junction
silicon
Journal
ACS applied materials & interfaces
ISSN: 1944-8252
Titre abrégé: ACS Appl Mater Interfaces
Pays: United States
ID NLM: 101504991
Informations de publication
Date de publication:
20 Feb 2019
20 Feb 2019
Historique:
pubmed:
24
1
2019
medline:
24
1
2019
entrez:
24
1
2019
Statut:
ppublish
Résumé
In this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS
Identifiants
pubmed: 30673232
doi: 10.1021/acsami.8b21629
doi:
Types de publication
Journal Article
Langues
eng